67,028 research outputs found

    Present status of coupled-channels calculations for heavy-ion subbarrier fusion reactions

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    The coupled-channels method has been a standard tool in analyzing heavy-ion fusion reactions at energies around the Coulomb barrier. We investigate three simplifications usually adopted in the coupled-channels calculations. These are i) the exclusion of non-collective excitations, ii) the assumption of coordinate independent coupling strengths, and iii) the harmonic oscillator approximation for multi-phonon excitations. In connection to the last point, we propose a novel microscopic method based on the beyond-mean-field approach in order to take into account the anharmonic effects of collective vibrations.Comment: 10 pages, 4 figures. A talk given at the 12th International Conference on Nucleus-Nucleus Collisions (NN2015), June 21-26, Catania, Ital

    One-pion exchange current corrections for nuclear magnetic moments in relativistic mean field theory

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    The one-pion exchange current corrections to isoscalar and isovector magnetic moments of double-closed shell nuclei plus and minus one nucleon with A=15,17,39A=15,17,39 and 41 have been studied in the relativistic mean field (RMF) theory and compared with previous relativistic and non-relativistic results. It has been found that the one-pion exchange current gives a negligible contribution to the isoscalar magnetic moments but a significant correction to the isovector ones. However, the one-pion exchange current doesn't improve the description of nuclear isovector magnetic moments for the concerned nuclei.Comment: 9 pages, 1 figure, 3 table

    Etching-dependent reproducible memory switching in vertical SiO2 structures

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    Vertical structures of SiO2_{2} sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 μ\mus) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 104^{4} were demonstrated.Comment: 6 pages, 3 figures + 2 suppl. figure
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